Vertical displacement detection of an aluminum nitride piezoelectric thin film using capacitance measurements

Mahmoud Al Ahmad, Robert Plana

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Piezoelectric materials have a strong interaction between their mechanical and electrical properties that translates into innovative components and circuits architectures. This work describes an original method using the electromechanical properties of the aluminum nitride (AlN) piezoelectric material to characterize its vertical extension when an electric field is applied. The novel techniques based on measurements of a planar parallel plate AlN capacitor without and with bias employing an impedance analyzer. The parallel plate capacitor theory and piezoelectric material analysis are used to calculate the vertical displacement of the AlN film.

Original languageEnglish
Pages (from-to)5-9
Number of pages5
JournalInternational Journal of Microwave and Wireless Technologies
Volume1
Issue number1
DOIs
Publication statusPublished - Feb 2009
Externally publishedYes

Keywords

  • Aluminum nitride
  • Characterizations
  • Material parameters
  • Piezoelectric material

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Vertical displacement detection of an aluminum nitride piezoelectric thin film using capacitance measurements'. Together they form a unique fingerprint.

Cite this