Twitching the inherent properties: the impact of transition metal Mn-doped on LaFeO3-based perovskite materials

Ramesh Kumar Raji, Tholkappiyan Ramachandran, M. Muralidharan, R. Suriakarthick, M. Dhilip, A. Raja, Vishista Kurapati, Fathalla Hamed, P. Ramasamy, Abdel Hamid I. Mourad

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Perovskite structured materials have received a lot of attention recently due to their extraordinary characteristics. In this work, conventional solid-state reaction was adopted to synthesize perovskite-based lanthanum ferrite materials and studied their inherent properties with the influence of Mn concentrations. The materials were characterized by XRD, FTIR, Raman, SEM, EDS and mapping, UV–Vis, photoluminescence, dielectric, magnetic properties and the Mn ions were found to be incorporated into the lanthanum ferrite. Rietveld refinement results confirm that synthesized materials are single-phase orthorhombic structures with an average crystallite size of 80–67 nm. A broad excitation band around 360 to 450 nm with a maximum at 409 nm is attributed to the intra configurational f–f electronic transition of La3+. Mn-doping-induced great enhancement in the visible range of LaFeO3 red luminescence. Mn-dopant has a significant influence on dielectric characteristics in the frequency ranges of 1 kHz and 1 MHz from 50 to 110 °C, which obey the Maxwell–Wagner polarization model and Koop's phenomenological theory. The observation of weak ferromagnetism at 305 K in the M–H loop is considered to be the result of the intriguing exchange interaction between Fe/Mn and oxidation states. It is proposed that LaMnxFe1−xO3 (x = 0.05–0.25) materials with varying characteristics could be developed to satisfy a diversity of requirements.

Original languageEnglish
Pages (from-to)25528-25544
Number of pages17
JournalJournal of Materials Science: Materials in Electronics
Volume32
Issue number20
DOIs
Publication statusPublished - Oct 2021

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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