Tight binding calculation of electronic properties of ternary alloy ZnSxSe1-x

K. Benkabou, F. Z. Aoumeur, H. Abid, N. Amrane

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Using an sp3s* empirical tight binding method, we calculate energy band gap and electronic band structure of the zinc-blende ternary alloy ZnSxSe1-x. The band gap composition is calculated using an extended version of the virtual crystal approximation, which introduce an empirical correction factor that takes into account the non-linear dependence of the band gap with the composition. The results compare well with the experimental data. The ionicity character and the refractive index are also calculated.

Original languageEnglish
Pages (from-to)147-153
Number of pages7
JournalPhysica B: Condensed Matter
Volume337
Issue number1-4
DOIs
Publication statusPublished - Sep 1 2003
Externally publishedYes

Keywords

  • Band structure
  • Semiconductor alloys
  • Tight binding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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