Thermal Annealing induced relaxation of compressive strain in porous GaN structures

Ahmed B. Slimane, Adel Najar, Tien K. Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

Original languageEnglish
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages921-922
Number of pages2
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: Sep 23 2012Sep 27 2012

Publication series

Name2012 IEEE Photonics Conference, IPC 2012

Conference

Conference25th IEEE Photonics Conference, IPC 2012
Country/TerritoryUnited States
CityBurlingame, CA
Period9/23/129/27/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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