Survey on memrister models

S. Singh, P. W.C. Prasad, Abeer Alsadoon, A. Beg, L. Pham, A. Elchouemi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

While hardware in a computer have developed greatly, users still has faced problems with its speed, and memory in terms of its performance. The recent developments in memristors made it possible to reduce the problems, as memristive models have been be designed to suit the requirements of time. However, different characteristics are expected from memristors depending upon its applications. The paper aims to compare three major models of memristors focusing on their advantages and limitations. It identifies the most suitable model of memristor that satisfies the memristive device conditions. Out of the three models, Voltage threshold adaptive memristor model (VTEAM) fits into the requirements and it has sufficient accuracy and computational efficiency.

Original languageEnglish
Title of host publicationInternational Conference on Electronics, Information, and Communications, ICEIC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467380164
DOIs
Publication statusPublished - Sep 7 2016
Event15th International Conference on Electronics, Information, and Communications, ICEIC 2016 - Danang, Viet Nam
Duration: Jan 27 2016Jan 30 2016

Publication series

NameInternational Conference on Electronics, Information, and Communications, ICEIC 2016

Other

Other15th International Conference on Electronics, Information, and Communications, ICEIC 2016
Country/TerritoryViet Nam
CityDanang
Period1/27/161/30/16

Keywords

  • Boundary Condition Model
  • Memristors
  • Threshold Adaptive Memristor Model
  • VTEAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

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