Scrutiny of structural disorder using Raman spectra and Tauc parameter in GeTe2 thin films

R. T. Ananth Kumar, Hussein A. Mousa, P. Chithra Lekha, Saleh T. Mahmoud, N. Qamhieh

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

The optimization of post deposition annealing in GeTe2 thin films towards structural rearrangements is reported. From X-ray diffraction, the prominent Bragg's peak is identified, and the full width at half maximum (FWHM), grain size, crystal structure, and microstrain are correlated with the annealing temperature. The process of chemical bonding energy from the Raman spectra confers the homopopolar and heteropolar bond formation. However, the assessed structural disorders are discussed in terms of the Tauc parameter.

Original languageEnglish
Article number012018
JournalJournal of Physics: Conference Series
Volume869
Issue number1
DOIs
Publication statusPublished - Jul 11 2017
EventInternational Conference Frontiers in Theoretical and Applied Physics, FTAPS 2017 - Sharjah, United Arab Emirates
Duration: Feb 22 2017Feb 25 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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