Quantum confinement and direct-bandgap character of Si/SiO2 superlattices

Nacir Tit, M. W.C. Dharma-wardana

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

We present tight-binding bandstructure calculations for {Si}m{SiO2}n crystalline superlattices (SLs) grown along the [001] direction. A striking new feature of the results is the essentially direct band-gap structure along the ZΓ symmetry line of the SL-Brillouin zone which has a blue shifted energy gap due to quantum confinement. This feature is very attractive for obtaining high radiative efficiencies. These results suggest the possibility of novel optical devices which exploit the direct bandstructure, and have implications for our understanding of the luminescence in porous-Si and other Si-based nanostructures.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalSolid State Communications
Volume106
Issue number3
DOIs
Publication statusPublished - 1998

Keywords

  • A. semiconductors
  • A. surfaces and interfaces
  • D. electronic bandstructure

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Quantum confinement and direct-bandgap character of Si/SiO2 superlattices'. Together they form a unique fingerprint.

Cite this