Piezoelectric coefficients of thin film aluminum nitride characterizations using capacitance measurements

Mahmoud Al Ahmad, Robert Plana

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Piezoelectric materials have become very useful in MEMS devices because of their electrical-mechanical reciprocity. Aluminum nitride has attracted considerable attention in recent years owing to its unique properties. Here we report for the determination of aluminum nitride (AlN) piezoelectric thin film charge constants. When voltage is applied, the AlN film geometrical dimensions will change. The proposed technique does this determination by taking the ratio of parallel plate capacitance for two different bias conditions under set of assumptions in deriving the equations for the ratio of capacitance for the two bias conditions.

Original languageEnglish
Article number4796220
Pages (from-to)140-142
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume19
Issue number3
DOIs
Publication statusPublished - Mar 2009
Externally publishedYes

Keywords

  • Aluminum nitride (AIN)
  • Characterizations
  • Dimensional variation
  • Material parameters
  • Piezoelectric material

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Piezoelectric coefficients of thin film aluminum nitride characterizations using capacitance measurements'. Together they form a unique fingerprint.

Cite this