In(Ga)n nanostructures and devices grown by molecular beam epitaxy and metal-assisted photochemical etching

Abdul Kareem K. Soopy, Zhaonan Li, Tianyi Tang, Jiaqian Sun, Bo Xu, Chao Zhao, Adel Najar

Research output: Contribution to journalReview articlepeer-review

2 Citations (Scopus)

Abstract

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Original languageEnglish
Article number126
Pages (from-to)1-28
Number of pages28
JournalNanomaterials
Volume11
Issue number1
DOIs
Publication statusPublished - Jan 2021

Keywords

  • GaN
  • InGaN
  • Molecular beam epitaxy
  • Photochemical etch

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)

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