Electrical and optical properties of indium-modified SeSbTe thin films for low power memory devices

H. Ghamlouche, S. T. Mahmoud, N. Qamhieh, A. Ayesh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical and optical characteristics of indium doped Se 2Sb2Te6 phase-change alloy are studied. It is found that adding indium to Se2Sb2Te6 alloy (In0.3Se2Sb2Te6) increased the crystallization temperature and reduced the electrical conduction activation energy. The capacitance-temperature measurements showed a drastic change in the capacitance of the modified film when the temperature approaches the crystallization temperature, and eventually the capacitance becomes negative and nonlinear. The negativity and nonlinearity in the capacitancevoltage dependence can be attributed to the growth of conductive crystalline islands by increasing the temperature.

Original languageEnglish
Title of host publicationAdvances in Innovative Materials and Applications
Pages245-248
Number of pages4
DOIs
Publication statusPublished - 2011
Event1st Mediterranean Conference on Innovative Materials and Applications, CIMA 2011 - Beirut, Lebanon
Duration: Mar 15 2011Mar 17 2011

Publication series

NameAdvanced Materials Research
Volume324
ISSN (Print)1022-6680

Other

Other1st Mediterranean Conference on Innovative Materials and Applications, CIMA 2011
Country/TerritoryLebanon
CityBeirut
Period3/15/113/17/11

Keywords

  • Amorphous films
  • Capacitance-voltage
  • Phase-change
  • Se-Sb-Te

ASJC Scopus subject areas

  • Engineering(all)

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