Transient photocurrent (TPC) measurements have been carried out on evaporated a-Se doped with either 0.2% or 0.5% of As and compared with analogous measurements on undoped and Cl doped a-Se. These measurements show that As doping of a-Se suppresses the shallow defects linked to the dihedral angle variations in a-Se chains, and makes the valence band tail states distribution steeper. These changes in the a-Se density of states increase the relative importance of the deep defect levels in As-doped a-Se and thus explain the widely reported hole lifetime shortening with As addition.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2010|
|Event||23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands|
Duration: Aug 23 2009 → Aug 28 2009
ASJC Scopus subject areas
- Condensed Matter Physics