Defect levels and charge carrier photogeneration in amorphous selenium layers

E. V. Emelianova, N. Qamhieh, M. Brinza, G. J. Adriaenssens, S. O. Kasap, R. E. Johanson, V. I. Arkhipov

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.

Original languageEnglish
Pages (from-to)215-219
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume326-327
DOIs
Publication statusPublished - Oct 1 2003
Event13th. International Symposium on Non-Oxide Glasses and New Optical Materials (ISNOG 13) - Pardubice, Czech Republic
Duration: Sep 9 2002Sep 13 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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