Computing topological indices of 2-dimensional silicon-carbons

Muhammad Naeem, Muhammad Kamran Siddiqui, Shahid Qaisar, Muhammad Imran, Muhammad Reza Farahani

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The applications of graph theory in chemistry and in the study of molecule structures are important, and lately, it has increased exponentially. Molecular graphs have points (vertices) representing atoms (regardless of type) and lines (edges) that represents chemical bonds (regardless of type) between atoms. In this article, we study the molecular graph of (2D) siliconcarbon Si2C3-III and SiC3-III. Moreover, we have computed and gave close formulas of degree based additive topological indices mainly first and second Zagreb index, general Randić, atom bond connectivity index(ABC), geometric arithmetic index(GA), fourth atom bond connectivity and fifth GAindex of Si2C3-III and SiC3-III.

Original languageEnglish
Pages (from-to)115-136
Number of pages22
JournalUPB Scientific Bulletin, Series B: Chemistry and Materials Science
Volume80
Issue number4
Publication statusPublished - 2018

Keywords

  • (2D) silicon-carbon SiC-III and SiC-III
  • ABC
  • ABC
  • GA
  • GAindex
  • General randić index
  • Topological indices

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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