Band structure of Ga1 - xAlxP under a uniaxial stress

N. Badi, H. Abid, B. Soudini, N. Amrane, M. Hammadi, M. Driz, B. Khelifa, H. Aourag

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1 Citation (Scopus)

Abstract

The band structure of Ga1 - xAlxP under a uniaxial stress is calculated in the virtual crystal approximation (VCA) using the empirical pseudopotential method (EPM). We discuss the optical transitions in this system under a static uniaxial compression and a tension along a cubic direction [100], on the light of the change in energy caused by these stresses for states of high symmetry near the top of the valence band and the bottom of the conduction band.

Original languageEnglish
Pages (from-to)50-54
Number of pages5
JournalComputational Materials Science
Volume3
Issue number1
DOIs
Publication statusPublished - Sep 1994
Externally publishedYes

ASJC Scopus subject areas

  • Computer Science(all)
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Physics and Astronomy(all)
  • Computational Mathematics

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