The band structure of GeSn and SiSn in zinc-blende structures is predicted using the empirical pseudopotential. Special emphasis is placed on the effects of inversions asymmetry such as ionicity. We found that GeSn exhibits a direct band gap whereas SiSn still remains indirect gap material.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics