Band structure calculation of GeSn and SiSn

Na Amrane, S. Ait Abderrahmane, H. Aourag

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

The band structure of GeSn and SiSn in zinc-blende structures is predicted using the empirical pseudopotential. Special emphasis is placed on the effects of inversions asymmetry such as ionicity. We found that GeSn exhibits a direct band gap whereas SiSn still remains indirect gap material.

Original languageEnglish
Pages (from-to)843-848
Number of pages6
JournalInfrared Physics and Technology
Volume36
Issue number5
DOIs
Publication statusPublished - Aug 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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