Ab-initio electronic structure calculation of the InAs multiple quantum wells in bulk GaAs

Nacir Tit, Maria Peressi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We present a theoretical investigation of the electronic structure of an InAs monomolecular plane inserted in bulk GaAs. Our calculations are based on the ab-initio self-consistent pseudopotential method. Both electrons and holes are found to be strongly localized in the vicinity of the inserted InAs monolayer, which therefore acts as a quantum well for all charge carriers. Moreover, using a finite-square-well model, we show that the energy gap increases with the increasing GaAs barrier thickness and also show the formation of a localized electron/hole state in the gap in the limit of a single InAs quantum well. This latter result successfully explains the intense and narrow low temperature photoluminescence spectra, experimentally observed in the InAs/GaAs single-monolayer quantum well systems.

Original languageEnglish
Pages (from-to)656-660
Number of pages5
JournalApplied Surface Science
Volume104-105
DOIs
Publication statusPublished - Sep 1996

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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